PHK5NQ15T_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

PHK5NQ15T
N-channel TrenchMOS standard level FET
2 August 2013
Product data sheet
1. General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
2. Features and benefits
• Low conduction losses due to low on-state resistance
3. Applications
• DC-to-DC convertors switching
• General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 150 °C
I_D
drain current
T_sp = 25 °C; V_GS = 10 V; Fig. 1; Fig. 3
P_tot
total power dissipation T_sp = 25 °C; Fig. 2
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 5 A; T_j = 25 °C; Fig. 9;
resistance
Fig. 10
Dynamic characteristics
Q_GD
gate-drain charge
V_GS = 10 V; I_D = 5 A; V_DS = 75 V;
T_j = 25 °C; Fig. 11
Min Typ Max Unit
-
-
150 V
-
-
5
A
-
-
6.25 W
-
56
75
mΩ
-
12
-
nC
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