PHK12NQ10T Datasheet, PDF (1/12 Pages) NXP Semiconductors – TrenchMOS standard level FET

PHK12NQ10T
TrenchMOS™ standard level FET
Rev. 01 — 15 September 2003
M3D315
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s Surface mounting package
s Low on-state resistance.
1.3 Applications
s DC-to-DC converter primary side
s Portable equipment applications.
1.4 Quick reference data
s V_DS ≤ 100 V
s P_tot ≤ 8.9 W
s I_D ≤ 11.6 A
s R_DSon ≤ 28 mΩ
2. Pinning information
Table 1:
Pin
1,2,3
4
5,6,7,8
Pinning - SOT96-1 (SO8), simplified outline and symbol
Description
Simplified outline
source (s)
gate (g)
8
5
drain (d)
1
Top view
4
MBK187
SOT96-1 (SO8)
Symbol
d
g
MBB076
s