PHE13005_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Silicon diffused power transistor

PHE13005
Silicon diffused power transistor
21 January 2014
Product data sheet
1. General description
High voltage, high speed NPN planar-passivated power switching transistor in a SOT78
plastic package intended for use in high frequency electronic lighting ballast applications
2. Features and benefits
• Fast switching
• High voltage capability of 700 V
• Low thermal resistance
3. Applications
• Electronic lighting ballasts
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
I_C
collector current
DC; Fig. 4; Fig. 1; Fig. 2
P_tot
total power dissipation T_mb ≤ 25 °C; Fig. 3
V_CESM
collector-emitter peak V_BE = 0 V
voltage
Static characteristics
h_FE
DC current gain
I_C = 1 A; V_CE = 5 V; T_mb = 25 °C;
Fig. 11
I_C = 2 A; V_CE = 5 V; T_mb = 25 °C;
Fig. 11
Min Typ Max Unit
-
-
4
A
-
-
75
W
-
-
700 V
12
20
40
10
17
28
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