PHE13003C_15 Datasheet, PDF (1/10 Pages) NXP Semiconductors – NPN power transistor

PHE13003C
NPN power transistor
7 October 2013
Product data sheet
1. General description
High voltage, high speed, planar passivated NPN power switching transistor in a SOT54
(TO-92) plastic package.
2. Features and benefits
• Fast switching
• High typical DC current gain
• High voltage capability of 700 V
• Very low switching and conduction losses
3. Applications
• Compact fluorescent lamps (CFL)
• Low power electronic lighting ballasts
• Off-line self-oscillating power supplies (SOPS) for battery charging
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
I_C
collector current
DC
P_tot
total power dissipation T_lead ≤ 25 °C; Fig. 1
V_CESM
collector-emitter peak V_BE = 0 V
voltage
Static characteristics
h_FE
DC current gain
I_C = 0.5 A; V_CE = 2 V; T_lead = 25 °C
Min Typ Max Unit
-
-
1.5 A
-
-
2.1 W
-
-
700 V
8
17
25
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