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| PHD95N03LT Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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PHD95N03LT
N-channel enhancement mode ï¬eld-effect transistor
Rev. 01 â 18 July 2001
Product data
M3D300
1. Description
N-channel logic level ï¬eld-effect power transistor in a plastic package using
TrenchMOSâ¢1 technology.
Product availability:
PHD95N03LT in SOT428 (D-PAK).
2. Features
s Low on-state resistance
s Fast switching.
3. Applications
s High frequency computer motherboard DC to DC converters
4. Pinning information
c
Table 1: Pinningc - SOT428, simpliï¬ed outline and symbol
Pin
Description
Simpliï¬ed outline
1
gate (g)
mb
2
drain (d)
[1]
3
source (s)
mb
mounting base,
connected to drain (d)
2
1
3
Top view
MBK091
SOT428 (D-Pak)
[1] It is not possible to make connection to pin 2 of the SOT428 package.
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Royal Philips Electronics.
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