PHD36N03LT Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

PHD/PHP36N03LT
N-channel TrenchMOS logic level FET
Rev. 02 — 8 June 2006
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features
I Logic level compatible
I Low gate charge
1.3 Applications
I DC-to-DC converters
I Switched-mode power supplies
1.4 Quick reference data
I V_DS ≤ 30 V
I R_DSon ≤ 17 mΩ
I I_D ≤ 43.4 A
I P_tot ≤ 57.6 W
2. Pinning information
Table 1. Pinning
Pin
Description
1
gate (G)
2
drain (D)
3
source (S)
mb
mounting base;
connected to drain
Simplified outline
[1]
mb
2
1
3
Symbol
mb
D
G
mbb076 S
SOT428 (DPAK)
123
SOT78 (3-lead TO-220AB)
[1] It is not possible to make a connection to pin 2 of the SOT428 package.