PHD22NQ20T-01 Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

PHD22NQ20T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 08 March 2004
M3D300
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s Low on-state resistance
s Fast switching.
1.3 Applications
s DC-to-DC converters
s General purpose switching.
1.4 Quick reference data
s V_DS ≤ 200 V
s P_tot ≤ 150 W
s I_D ≤ 21.1 A
s R_DSon ≤ 120 mΩ.
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT428 (D-PAK), simplified outline and symbol
Description
Simplified outline
gate (g)
drain (d)
[1]
mb
source (s)
mounting base;
connected to drain (d)
2
1
3
Top view
MBK091
SOT428 (D-PAK)
[1] It is not possible to make a connection to pin 2 of the SOT428 package.
Symbol
d
g
MBB076
s