PHD20N06T Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

PHD20N06T
N-channel TrenchMOS™ transistor
Rev. 01 — 22 February 2001
M3D300
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™¹ technology.
Product availability:
PHD20N06T in SOT428 (D-PAK).
2. Features
s TrenchMOS™ technology
s Low on-state resistance
s Fast switching.
3. Applications
s Switched mode power supplies
s DC to DC converters
s General purpose switch.
c
c
4. Pinning information
Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol
Pin
Description
Simplified outline
1
gate (g)
mb
2
drain (d)
3
source (s)
mb
drain (d)
2
1
3
Top view
MBK091
SOT428 (D-PAK)
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Royal Philips Electronics.