PHD16N03T Datasheet, PDF (1/12 Pages) NXP Semiconductors – TrenchMOS standard level FET

PHD16N03T
TrenchMOS™ standard level FET
Rev. 01 — 18 August 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHD16N03T in SOT428 (D-PAK).
1.2 Features
s Fast Switching
s TrenchMOS^TM technology.
1.3 Applications
s DC-to-DC converters
s General purpose switch.
1.4 Quick reference data
s V_DS ≤ 30 V
s P_tot ≤ 32.6 W
s I_D ≤ 13.1 A
s R_DSon ≤ 100 mΩ.
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT428, simplified outline and symbol
Description
Simplified outline
gate (g)
drain (d)
[1]
mb
source (s)
mounting base;
connected to drain (d)
2
1
3
Top view
MBK091
SOT428 (D-PAK)
[1] It is not possible to make connection to pin 2 of the SOT428 package.
Symbol
d
g
MBB076
s