PHD13005_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – NPN power transistor with integrated diode

PHD13005
NPN power transistor with integrated diode
Rev. 02 — 29 July 2010
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT78 plastic package.
1.2 Features and benefits
„ Fast switching
„ High voltage capability
„ Integrated anti-parallel E-C diode
„ Low thermal resistance
1.3 Applications
„ Integrated fluorescent lamp ballasts
e.g. high power cluster lamps
„ Low Voltage Tungsten Halogen
transformers
„ Remote fluorescent lamp ballasts
„ Self Oscillating Power Supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
I_C
collector current
see Figure 1; see Figure 2;
see Figure 4; DC
P_tot
total power
dissipation
see Figure 3; T_mb ≤ 25 °C
V_CESM
collector-emitter
peak voltage
V_BE = 0 V
Static characteristics
h_FE
DC current gain
V_CE = 5 V; I_C = 1.0 A;
see Figure 10
V_CE = 5 V; I_C = 2.0 A;
see Figure 10
Min Typ Max Unit
-
-
4A
-
-
75 W
-
-
700 V
12 20 40
10 17 28