PHD13003C_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – NPN power transistor with integrated diode

PHD13003C
NPN power transistor with integrated diode
Rev. 01 — 29 July 2010
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel emitter-collector diode in a SOT54 plastic package
1.2 Features and benefits
„ Fast switching
„ High typical DC current gain
„ High voltage capability
„ Integrated anti-parallel E-C diode
1.3 Applications
„ Compact fluorescent lamps (CFL)
„ Low power electronic lighting ballasts
„ Off-line self-oscillating power supplies
(SOPS) for battery charging
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
I_C
collector current DC
P_tot
total power
T_lead ≤ 25 °C; see Figure 1
dissipation
V_CESM
collector-emitter V_BE = 0 V
peak voltage
Static characteristics
h_FE
DC current gain I_C = 0.5 A; V_CE = 2 V;
T_j = 25 °C
Min Typ Max Unit
-
-
1.5 A
-
-
2.1 W
-
-
700 V
8 17 25