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PHB20NQ20T_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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PHB20NQ20T
N-channel TrenchMOS standard level FET
Rev. 02 â 16 December 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Higher operating power due to low
thermal resistance
 Low conduction losses due to low
on-state resistance
 Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
 DC-to-DC converters
 General purpose switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS
drain-source voltage
ID
drain current
Ptot
total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
Conditions
Tj ⥠25 °C; Tj ⤠175 °C
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
VGS = 10 V; ID = 10 A;
Tj = 25 °C
VGS = 10 V; ID = 20 A;
VDS = 160 V; Tj = 25 °C
Min Typ Max Unit
-
-
200 V
-
-
20 A
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-
150 W
-
120 130 mâ¦
-
22 -
nC
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