PHB160N03T Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

PHB160N03T
N-channel enhancement mode field-effect transistor
Rev. 01 — 13 September 2000
M3D166
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™¹ technology.
Product availability:
PHB160N03T in SOT404 (D^2-PAK).
2. Features
s TrenchMOS™ technology
s Very low on-state resistance.
3. Applications
s DC to DC converters
s Switched-mode power supplies
s General purpose switch.
c
4. Pinning^c information
Table 1: Pinning - SOT404 (D²-PAK), simplified outline and symbol
Pin
Description
Simplified outline
1
gate (g)
mb
2
drain (d)
[1]
3
source (s)
mb
connected to drain (d)
Symbol
d
g
2
1
3 MBK116
SOT404 (D²-PAK)
MBB076
s
[1] It is not possible to make connection to pin 2 of the SOT404 package.
1. TrenchMOS is a trademark of Royal Philips Electronics.