PHB100N03LT Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

PHB100N03LT
N-channel enhancement mode field-effect transistor
Rev. 01 — 07 September 2000
M3D166
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™¹ technology.
Product availability:
PHB100N03LT in SOT404 (D²-PAK).
2. Features
s TrenchMOS™ technology
s Low on-state resistance
s Avalanche ruggedness rated
s Logic level compatible
s Surface mount package.
3. Applications
s DC to DC converters
c
c
s Synchronous rectification.
4. Pinning information
Table 1: Pinning - SOT404, simplified outline and symbol
Pin
Description
Simplified outline
1
gate (g)
mb
2
drain (d)
[1]
3
source (s)
mb
connected to drain (d)
2
1
3
MBK116
SOT404 (D²-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Royal Philips Electronics.