PH97005 Datasheet, PDF (1/9 Pages) NXP Semiconductors – Low cost DECT Po wer Amplifier

Philips Semiconductors B.V.
Low cost DECT Power Amplifier
PH9 7005
Preliminary Application Note
RNR-T4 5-97-M-0 931
Au th or
L.C. Colussi
November 21, 1997
Discrete Semiconductors Nijmegen
Gerstweg 2, 6534 AE Nijmegen
The Netherlands
Key wor ds
PA, DECT, DPO, BFG425W, BFG21W
Abs tr ac t
Application of new 5^th generation discrete bipolar RF transistors facilitates design of a low cost
two-stage power amplifier for DECT systems, having a power gain of 26 dB and an overall
efficiency better than 40%. The amplifier operates from a single supply voltage, includes bias
circuitry for load power adjustment and on/off switching and is mounted on a bilayer pcb,
requiring 10 x 20 mm. A description is given of the circuit design and the board layout, including
measurement results.