PH8230E Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-CHANNEL TRENCHMOSTM ENHANCED LOGIC LEVEL FET

PH8230E
N-channel TrenchMOS™ enhanced logic level FET
M3D748
Rev. 03 — 02 March 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s Low thermal resistance
s Low gate drive
s SO8 equivalent area footprint
s Low on-state resistance.
1.3 Applications
s DC-to-DC converters
s Portable appliances
s Switched-mode power supplies
s Notebook computers.
1.4 Quick reference data
s V_DS ≤ 30 V
s P_tot ≤ 62.5 W
s I_D ≤ 67 A
s R_DSon ≤ 8.2 mΩ
2. Pinning information
Table 1: Pinning - SOT669 (LFPAK), simplified outline and symbol
Pin
Description
Simplified outline
1,2,3
source (s)
mb
4
gate (g)
mb
mounting base;
connected to drain (d)
1234
Top view MBL286
SOT669 (LFPAK)
Symbol
d
g
MBB076
s