PH8030L Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

PH8030L
N-channel TrenchMOS logic level FET
Rev. 01 — 6 February 2006
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features
s Optimized for use in DC-to-DC
converters
s Logic level compatible
s Very low switching and conduction
losses
s Lead-free package
1.3 Applications
s DC-to-DC converters
s Voltage regulators
s Switched-mode power supplies
s Notebook computers
1.4 Quick reference data
s V_DS ≤ 30 V
s R_DSon ≤ 5.9 mΩ
s I_D ≤ 76.7 A
s Q_GD = 3.1 nC (typ)
2. Pinning information
Table 1: Pinning
Pin
Description
1, 2, 3 source (S)
4
gate (G)
mb
mounting base; connected to drain (D)
Simplified outline
mb
1234
SOT669 (LFPAK)
Symbol
D
G
mbb076 S