PH6325L Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

PH6325L
N-channel TrenchMOS™ logic level FET
M3D748
Rev. 01 — 28 April 2004
Preliminary data
1. Product profile
1.1 Description
Logic level N-channel enhancement mode field-effect transistor in a plastic package
using TrenchMOS™ technology.
1.2 Features
s Optimized for use in DC-to-DC
converters
s Low threshold voltage
s Very low switching and conduction
losses
s Low thermal resistance.
1.3 Applications
s DC-to-DC converters
s Voltage regulators
s Switched-mode power supplies
s Notebook computers.
1.4 Quick reference data
s V_DS ≤ 25 V
s Q_gd = 3.3 nC (typ)
s R_DSon ≤ 6.3 mΩ (V_GS = 10 V)
s I_D ≤ 78.7 A
s Q_g(tot) = 13.3 nC (typ)
s R_DSon ≤ 9.5 mΩ (V_GS = 4.5 V).
2. Pinning information
Table 1:
Pin
1,2,3
4
mb
Pinning - SOT669 (LFPAK), simplified outline and symbol
Description
Simplified outline
source (s)
gate (g)
mb
mounting base;
connected to drain (d)
1234
Top view MBL286
SOT669 (LFPAK)
Symbol
d
g
MBB076
s