PH4840S Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

PH4840S
N-channel TrenchMOS™ intermediate level FET
M3D748
Rev. 01 — 04 March 2004
Preliminary data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s Low thermal resistance
s Low threshold voltage
s SO8 equivalent area footprint
s Low on-state resistance.
1.3 Applications
s DC-to-DC converters
s Portable appliances
s Switched-mode power supplies
s Notebook computers.
1.4 Quick reference data
s V_DS ≤ 40 V
s P_tot ≤ 62.5 W
s I_D ≤ 94.5 A
s R_DSon ≤ 4.1 mΩ
2. Pinning information
Table 1:
Pin
1,2,3
4
mb
Pinning - SOT669 (LFPAK), simplified outline and symbol
Description
Simplified outline
source (s)
mb
gate (g)
mounting base;
connected to drain (d)
1234
Top view MBL286
SOT669 (LFPAK)
Symbol
d
g
MBB076
s