PH3855L Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

PH3855L
N-channel TrenchMOS™ logic level FET
Rev. 01 — 26 January 2005
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS™ technology.
1.2 Features
s Logic level threshold
s Surface mounted package.
1.3 Applications
s DC-to-DC converters
s Motors, lamps, solenoids
s General purpose power switching
s 12 V and 24 V loads.
1.4 Quick reference data
s V_DS ≤ 55 V
s R_DSon ≤ 36 mΩ
s I_D ≤ 24 A
s Q_gd = 5.5 nC (typ).
2. Pinning information
Table 1:
Pin
1, 2, 3
4
mb
Pinning
Description
source
gate
mounting base;
connected to drain
Simplified outline
mb
Symbol
D
G
mbb076 S
1234
Top view
SOT669 (LFPAK)