PH3230S Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS™ logic level FET

PH3230S
N-channel TrenchMOS™ logic level FET
M3D748
Rev. 03 — 02 March 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s Logic level compatible
s High density mounting
s Low gate charge
s Very low on-state resistance.
1.3 Applications
s DC-to-DC converters
s Notebook computers
s Switched-mode power supplies
s Computer motherboards.
1.4 Quick reference data
s V_DS ≤ 30 V
s P_tot ≤ 62.5 W
s I_D ≤ 100 A
s R_DSon ≤ 3.2 mΩ.
2. Pinning information
Table 1:
Pin
1,2,3
4
mb
Pinning - SOT669 (LFPAK), simplified outline and symbol
Description
Simplified outline
source (s)
mb
gate (g)
drain (d)
1234
Top view MBL286
SOT669 (LFPAK)
Symbol
d
g
MBB076
s