PH3120L Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

PH3120L
N-channel TrenchMOS™ logic level FET
Rev. 02 — 20 January 2005
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS™ technology.
1.2 Features
s Low thermal resistance
s Logic level gate drive
s SO8 equivalent area footprint
s Very low on-state resistance
1.3 Applications
s DC-to-DC converters
s Portable appliances
s Switched-mode power supplies
s Notebook computers
1.4 Quick reference data
s V_DS ≤ 20 V
s P_tot ≤ 62.5 W
s I_D ≤ 100 A
s R_DSon ≤ 2.65 mΩ
2. Pinning information
Table 1:
Pin
1, 2, 3
4
mb
Pinning
Description
source
gate
mounting base; connected to drain
Simplified outline
mb
Symbol
D
G
mbb076 S
1234
Top view
SOT669 (LFPAK)