PH2625L Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS-TM logic level FET

PH2625L
N-channel TrenchMOS™ logic level FET
Rev. 02 — 24 February 2005
Preliminary data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS™ technology.
1.2 Features
s Optimized for use in DC-to-DC
converters
s Low threshold voltage
s Very low switching and conduction
losses
s Low thermal resistance.
1.3 Applications
s DC-to-DC converters
s Voltage regulators
s Switched-mode power supplies
s Notebook computers.
1.4 Quick reference data
s V_DS ≤ 25 V
s Q_gd = 7.3 nC (typ)
s R_DSon ≤ 2.8 mΩ (V_GS = 10 V)
s I_D ≤ 100 A
s Q_g(tot) = 32 nC (typ)
s R_DSon ≤ 4.1 mΩ (V_GS = 4.5 V).
2. Pinning information
Table 1:
Pin
1, 2, 3
4
mb
Pinning
Description
source
gate
mounting base; connected to drain
Simplified outline
mb
Symbol
D
G
mbb076 S
1234
SOT669 (LFPAK)