PESDXV4UK Datasheet, PDF (1/15 Pages) NXP Semiconductors – Very low capacitance unidirectional quadruple ESD protection diode arrays

PESD3V3V4UK;
PESD5V0V4UK; PESD9V0V4UK
Very low capacitance unidirectional quadruple ESD protection
diode arrays
Rev. 1 — 25 August 2010
Product data sheet
1. Product profile
1.1 General description
Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection
diode arrays in a leadless ultra small SOT891 Surface-Mounted Device (SMD) plastic
package designed to protect up to four unidirectional signal lines from the damage caused
by ESD and other transients.
1.2 Features and benefits
„ ESD protection of up to four lines
„ Very low diode capacitance
„ Max. peak pulse power: P_PP = 28 W
„ Low clamping voltage: V_CL = 9.5 V
„ AEC-Q101 qualified
„ Very low leakage current: I_RM = 0.1 μA
„ ESD protection up to 15 kV
„ IEC 61000-4-2; level 4 (ESD)
„ IEC 61000-4-5 (surge); I_PP = 2.7 A
1.3 Applications
„ Computers and peripherals
„ Audio and video equipment
„ Cellular handsets and accessories
„ Communication systems
„ Portable electronics
„ Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1. Quick reference data
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
V_RWM
reverse standoff voltage
PESD3V3V4UK
PESD5V0V4UK
PESD9V0V4UK
Min Typ Max Unit
-
-
3.3 V
-
-
5.0 V
-
-
9.0 V