PESDXL2BT Datasheet, PDF (1/14 Pages) NXP Semiconductors – Low capacitance double bidirectional ESD protection diodes in SOT23

PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes
in SOT23
Rev. 01 — 1 November 2005
Product data sheet
1. Product profile
1.1 General description
Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a
SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two
signal lines from the damage caused by ESD and other transients.
1.2 Features
s ESD protection of two lines
s Max. peak pulse power: P_PP = 350 W
s Low clamping voltage: V_CL = 26 V
s Small SMD plastic package
s Ultra low leakage current: I_RM < 90 nA
s ESD protection up to 23 kV
s IEC 61000-4-2, level 4 (ESD)
s IEC 61000-4-5 (surge); I_PP = 15 A
1.3 Applications
s Computers and peripherals
s Audio and video equipment
s Cellular handsets and accessories
s Communication systems
s Portable electronics
s Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1:
Symbol
V_RWM
C_d
Quick reference data
Parameter
reverse standoff voltage
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
diode capacitance
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
Conditions
V_R = 0 V;
f = 1 MHz
Min Typ Max Unit
-
-
3.3 V
-
-
5.0 V
-
-
12
V
-
-
15
V
-
-
24
V
-
101 -
pF
-
75
-
pF
-
19
-
pF
-
16
-
pF
-
11
-
pF