PESD5V0X2UM_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Ultra low capacitance unidirectional double ESD protection diode

PESD5V0X2UM
Ultra low capacitance unidirectional double ESD protection
diode
3 February 2014
Product data sheet
1. General description
Ultra low capacitance unidirectional double ElectroStatic Discharge (ESD) protection
diode in a DFN1006-3 (SOT883) leadless ultra small Surface-Mounted Device (SMD)
plastic package designed to protect up to two signal lines from the damage caused by
ESD and other transients.
2. Features and benefits
• Ultra low diode capacitance: C_d = 0.50 pF
• ESD protection up to 10 kV; IEC61000-4-2
• I_PPM = 1.5 A; IEC 61643-321 (surge)
• AEC-Q101 qualified
3. Applications
• High-speed data lines
• Portable electronics
• Communication systems
• Computers and peripherals
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per diode
C_d
diode capacitance
V_RWM
reverse standoff
voltage
Conditions
f = 1 MHz; V_R = 0 V
[1] Measured from pin 1 or 2 to 3.
Min Typ Max Unit
[1]
-
-
0.5 0.65 pF
-
5
V
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