PESD5V0X2UAMB_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Ultra low capacitance unidirectional double ESD protection diode

PESD5V0X2UAMB
Ultra low capacitance unidirectional double ESD protection
diode
10 April 2014
Product data sheet
1. General description
Ultra low capacitance unidirectional double ElectroStatic Discharge (ESD) protection
diode in a DFN1006B-3 (SOT883B) leadless ultra small Surface-Mounted Device (SMD)
plastic package designed to protect up to two signal lines from the damage caused by
ESD and other transients.
2. Features and benefits
• Ultra low diode capacitance: C_d = 0.8 pF
• Ultra low package height of only 0.37 mm
• ESD protection up to 15 kV; IEC61000-4-2
• I_PPM = 2.5 A; IEC 61643-321 (surge)
• AEC-Q101 qualified
3. Applications
• High-speed data lines
• Portable electronics
• Communication systems
• Computers and peripherals
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per diode
C_d
diode capacitance
V_RWM
reverse standoff
voltage
Conditions
f = 1 MHz; V_R = 0 V
[1] Measured from pin 1 or 2 to 3.
Min Typ Max Unit
[1]
-
-
0.8 0.95 pF
-
5
V
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