PESD5V0X1ULD Datasheet, PDF (1/12 Pages) NXP Semiconductors – Ultra low capacitance unidirectional ESD protection diode

PESD5V0X1ULD
Ultra low capacitance unidirectional ESD protection diode
Rev. 1 — 15 February 2011
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode
designed to protect one signal line from the damage caused by ESD and other transients.
The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD)
plastic package with visible and solderable side pads.
The combination of extremely low capacitance and ultra low clamping voltage makes the
device ideal for high-speed data line protection applications.
1.2 Features and benefits
 ESD protection of one line
 Ultra low diode capacitance
C_d = 0.95 pF
 Ultra low clamping voltage: V_CL = 8 V
 Ultra low leakage current: I_RM = 1 nA
 ESD protection up to 8 kV
 IEC 61000-4-2; level 4 (ESD)
 Ultra small SMD plastic package
 Solderable tin-plated side pads
 AEC-Q101 qualified
1.3 Applications
 Computers and peripherals
 Audio and video equipment
 Cellular handsets and accessories
 10/100/1000 Mbit/s Ethernet
 Communication systems
 Portable electronics
 Subscriber Identity Module (SIM) card
protection
 USB, High-Definition Multimedia
Interface (HDMI), FireWire
 High-speed data lines
1.4 Quick reference data
Table 1.
Symbol
V_RWM
C_d
Quick reference data
Parameter
reverse standoff voltage
diode capacitance
Conditions
f = 1 MHz; V_R = 0 V
Min Typ Max Unit
-
-
5.5 V
-
0.95 1.1 pF