PESD5V0X1BCL Datasheet, PDF (1/12 Pages) NXP Semiconductors – Extremely low capacitance bidirectional ESD protection diode

PESD5V0X1BCL
Extremely low capacitance bidirectional ESD protection diode
Rev. 1 — 12 March 2012
Product data sheet
1. Product profile
1.1 General description
Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in
a leadless ultra small SOD882 (DFN1006-2) Surface-Mounted Device (SMD) plastic
package designed to protect one signal line from the damage caused by ESD and other
transients. The combination of extremely low capacitance, high ESD maximum rating and
ultra small package makes the device ideal for high-speed data line protection.
1.2 Features and benefits
 Bidirectional ESD protection of one line  ESD protection up to 8 kV
 Extremely low capacitance:
 IEC 61000-4-2; level 4 (ESD)
C_d = 0.49 pF
 Low clamping voltage: V_CL = 18 V
 Ultra low leakage current: I_RM = 1 nA
 AEC-Q101 qualified
1.3 Applications
 Computers and peripherals
 Audio and video equipment
 Cellular handsets and accessories
 10/100/1000 Mbit/s Ethernet
 USB, High-Definition Multimedia
Interface (HDMI), FireWire
 Portable electronics
 SIM card protection
 High-speed data lines
 Communication systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per device
V_RWM
C_d
reverse standoff voltage
diode capacitance
Conditions
f = 1 MHz; V_R = 0 V
Min Typ Max Unit
-
-
5.5 V
-
0.49 0.60 pF