 English |
|
|
|
|
|
|
|
| PESD5V0V2BM_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Very low capacitance bidirectional ESD protection diodes | |||
| |||
|
PESD5V0V2BM
Very low capacitance bidirectional ESD protection diodes
14 August 2015
Product data sheet
1. General description
Two bidirectional ElectroStatic Discharge (ESD) protection diodes designed to protect
two signal lines from damage caused by ESD and other transients. The device is housed
in a DFN1006-3 (SOT883) leadless ultra small Surface-Mounted Device (SMD) plastic
package.
2. Features and benefits
⢠Bidirectional ESD protection of two lines
⢠Ultra small SMD plastic package
⢠ESD protection up to 30 kV; IEC 61000-4-2
⢠IPPM = 9 A; IEC 61000-4-5 (surge)
⢠Ultra low leakage current: IRM = 1 nA
⢠AEC-Q101 qualified
3. Applications
⢠Computers and peripherals
⢠Audio and video equipment
⢠Cellular handsets and accessories
⢠Communication systems
⢠Portable electronics
4. Quick reference data
Table 1.
Symbol
VRWM
Cd
Quick reference data
Parameter
reverse standoff
voltage
diode capacitance
Conditions
Tamb = 25 °C
f = 1 MHz; VR = 0 V; Tamb = 25 °C
Min Typ Max Unit
-
-
5
V
-
18
20
pF
Scan or click this QR code to view the latest information for this product
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese