PESD5V0V1USF_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Very low capacitance unidirectional ESD protection diode

PESD5V0V1USF
Very low capacitance unidirectional ESD protection diode
Rev. 1 — 16 July 2012
Product data sheet
1. Product profile
1.1 General description
Very low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode
designed to protect one signal line from the damage caused by ESD and other transients.
The device is encapsulated in a leadless super small DSN0603-2 (SOD962)
Surface-Mounted Device (SMD) package.
1.2 Features and benefits
 ESD protection of one line
 Low diode capacitance C_d = 4 pF
 Super small SMD package
 Ultra low leakage current I_RM < 1 nA
 ESD protection up to 12 kV
 IEC 61000-4-2; level 4 (ESD)
1.3 Applications
 Computers and peripherals
 Audio and video equipment
 Cellular handsets and accessories
 Communication systems
 Portable electronics
1.4 Quick reference data
Table 1. Quick reference data
T_amb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
V_RWM
C_d
reverse standoff voltage
diode capacitance
f = 1 MHz; V_R = 0 V
Min Typ Max Unit
-
-
5
V
-
4
5
pF