PESD5V0V1BLD_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – Very low capacitance bidirectional ESD protection diode

PESD5V0V1BLD
Very low capacitance bidirectional ESD protection diode
Rev. 1 — 7 December 2010
Product data sheet
1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode
designed to protect one signal line from the damage caused by ESD and other transients.
The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD)
plastic package with visible and solderable side pads.
1.2 Features and benefits
„ Bidirectional ESD protection of one line „ Low clamping voltage: V_CL = 12.5 V
„ Ultra small SMD plastic package
„ Ultra low leakage current: I_RM < 1 nA
„ Solderable side pads
„ ESD protection up to 30 kV
„ Package height typ. 0.37 mm
„ IEC 61000-4-2; level 4 (ESD)
„ Very low diode capacitance: C_d = 11 pF „ IEC 61000-4-5 (surge); I_PP = 4.8 A
„ Max. peak pulse power: P_PP = 45 W „ AEC-Q101 qualified
1.3 Applications
„ Computers and peripherals
„ Audio and video equipment
„ Cellular handsets and accessories
„ Subscriber Identity Module (SIM) card
protection
„ Communication systems
„ Portable electronics
„ 10/100 Mbit/s Ethernet
„ FireWire
1.4 Quick reference data
Table 1. Quick reference data
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
V_RWM
reverse standoff voltage
C_d
diode capacitance
f = 1 MHz; V_R = 0 V
Min Typ Max Unit
-
-
5
V
-
11
13
pF