PESD5V0V1BDSF_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Very low capacitance bidirectional ESD protection diode

PESD5V0V1BDSF
Very low capacitance bidirectional ESD protection diode
Rev. 1 — 17 April 2012
Product data sheet
1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a
DSN0603-2 (SOD962) leadless ultra small Surface-Mounted Device (SMD) package
designed to protect one signal line from the damage caused by ESD and other transients.
1.2 Features and benefits
 Bidirectional ESD protection of one line
 Very low diode capacitance C_d = 5.3 pF
 ESD protection up to 25 kV according to IEC 61000-4-2
 Ultra small SMD package
 Optimized diode structure for ultra high ESD robustness
1.3 Applications
 Cellular handsets and accessories
 Portable electronics
 Communication systems
 Computers and peripherals
1.4 Quick reference data
Table 1. Quick reference data
T_amb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
V_RWM
reverse standoff voltage
C_d
diode capacitance
f = 1 MHz; V_R = 0 V
Min Typ Max Unit
-
-
5
V
4
5.3 6
pF
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode (diode 1)
cathode (diode 2)
Simplified outline
1
2
Transparent
top view
Graphic symbol
1
2
sym045