PESD5V0U2BMB_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Ultra low capacitance bidirectional double ESD protection

PESD5V0U2BMB
Ultra low capacitance bidirectional double ESD protection
array
Rev. 1 — 13 March 2012
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection array
designed to protect up to two signal lines from the damage caused by ESD and other
transients. The device is housed in a leadless ultra small SOT883B (DFN1006B-3)
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
 ESD protection of up to two lines
 AEC-Q101 qualified
 Ultra low diode capacitance C_d = 2.9 pF  ESD protection up to 10 kV
 Ultra low leakage current I_RM = 5 nA  IEC 61000-4-2; level 4 (ESD)
1.3 Applications
 Computers and peripherals
 Audio and video equipment
 Cellular handsets and accessories
 Communication systems
 Portable electronics
 SIM card protection
 FireWire
 High-speed data lines
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per diode
V_RWM
C_d
reverse standoff voltage
diode capacitance
Conditions
f = 1 MHz; V_R = 0 V
Min Typ Max Unit
-
-
5
V
-
2.9 3.5 pF