PESD5V0U1BLD_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Ultra low capacitance bidirectional ESD protection diode

PESD5V0U1BLD
Ultra low capacitance bidirectional ESD protection diode
Rev. 2 — 27 July 2011
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode
designed to protect one signal line from the damage caused by ESD and other transients.
The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD)
plastic package with visible and solderable side pads.
1.2 Features and benefits
 Bidirectional ESD protection of one line  AEC-Q101 qualified
 Ultra small SMD plastic package
 ESD protection up to 10 kV
 Solderable side pads
 IEC 61000-4-2; level 4 (ESD)
 Package height typ. 0.37 mm
 Ultra low leakage current: I_RM = 5 nA
 Ultra low diode capacitance C_d = 2.9 pF
1.3 Applications
 Computers and peripherals
 Audio and video equipment
 Cellular handsets and accessories
 High-speed data lines
 Communication systems
 Portable electronics
1.4 Quick reference data
Table 1.
Symbol
V_RWM
C_d
Quick reference data
Parameter
reverse standoff voltage
diode capacitance
Conditions
f = 1 MHz; V_R = 0 V
Min Typ Max Unit
-
-
5
V
-
2.9 3.5 pF
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode (diode 1)
cathode (diode 2)
[1] The marking bar indicates pin 1.
Simplified outline
[1]
1
2
Transparent
top view
Graphic symbol
1
2
sym045