PESD5V0U1BA Datasheet, PDF(1/12 Page) NXP Semiconductors – Ultra low capacitance bidirectional ESD protection diodes

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PESD5V0U1BA Datasheet, PDF (1/12 Pages) NXP Semiconductors – Ultra low capacitance bidirectional ESD protection diodes

PESD5V0U1BA;

PESD5V0U1BB; PESD5V0U1BL

Ultra low capacitance bidirectional ESD protection diodes

Rev. 01 â 25 April 2007

Product data sheet

1. Product proï¬le

1.1 General description

Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in

small Surface-Mounted Device (SMD) plastic packages designed to protect one data line

from the damage caused by ESD.

Table 1. Product overview

Type number

Package

NXP

PESD5V0U1BA

SOD323

PESD5V0U1BB

SOD523

PESD5V0U1BL

SOD882

JEITA

SC-76

SC-79

Package

conï¬guration

very small

ï¬at lead ultra small

leadless ultra small

1.2 Features

I Bidirectional ESD protection of one line I Ultra low leakage current: IRM = 5 nA

I Ultra low diode capacitance: Cd = 2.9 pF I ESD protection of up to 10 kV

I IEC 61000-4-2; level 4 (ESD)

1.3 Applications

I Computers and peripherals

I Audio and video equipment

I Cellular handsets and accessories

I 10/100/1000 Ethernet

I Local Area Network (LAN) equipment

I Communication systems

I Portable electronics

I Subscriber Identity Module (SIM) card

protection

I FireWire

I High-speed data lines

1.4 Quick reference data

Table 2. Quick reference data

Tamb = 25 Â°C unless otherwise speciï¬ed.

Symbol Parameter

Conditions

Per diode

VRWM

reverse standoff voltage

diode capacitance

f = 1 MHz; VR = 0 V

Min Typ Max Unit

2.9 3.5 pF

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