PESD5V0S2BT Datasheet, PDF (1/11 Pages) NXP Semiconductors – Low capacitance bi-directional double ESD protection diode in SOT23 package

PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
in SOT23 package
Rev. 02 — 27 May 2004
Product data sheet
1. Product profile
1.1 General description
Low capacitance bi-directional double ESD protection diode in the small SOT23 plastic
package designed to protect 2 data lines from the damage caused by Electro Static
Discharge (ESD) and other transients.
1.2 Features
s Bi-directional ESD protection of 2 lines
s Low diode capacitance
s Max. peak pulse power: P_pp = 130 W at t_p = 8/20 µs
s Low clamping voltage: V_CL(R) = 14 V at I_pp = 12 A
s Ultra low leakage current: I_RM = 5 nA at V_RWM = 5 V
s ESD protection > 30 kV
s IEC 61000-4-2; level 4 (ESD)
s IEC-61000-4-5 (surge); I_pp = 12 A at t_p = 8/20 µs.
1.3 Applications
s Cellular handsets and accessories
s Portable electronics
s Computers and peripherals
s Communication systems
s Audio and video equipment.
1.4 Quick reference data
Table 1:
Symbol
V_RWM
C_d
Quick reference data
Parameter
reverse stand-off voltage
diode capacitance
number of protected lines
Conditions
f = 1 MHz;
V_R = 0 V
Min Typ Max Unit
-
5
-
V
-
35
-
pF
-
2
-