PESD5V0S1UJ Datasheet, PDF(1/14 Page) NXP Semiconductors – Unidirectional ESD protection for transient voltage suppression

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PESD5V0S1UJ Datasheet, PDF (1/14 Pages) NXP Semiconductors – Unidirectional ESD protection for transient voltage suppression

PESD5V0S1UJ; PESD12VS1UJ

Unidirectional ESD protection for transient voltage

suppression

Rev. 01 â 3 June 2009

Product data sheet

1. Product proï¬le

1.1 General description

Unidirectional ElectroStatic Discharge (ESD) protection diodes in a very small

Surface-Mounted Device (SMD) plastic package designed to protect one signal line

from the damage caused by ESD and transient overvoltage.

Table 1. Product overview

Type number

Package

NXP

PESD5V0S1UJ

SOD323F

PESD12VS1UJ

JEITA

SC-90

Conï¬guration

single

1.2 Features

I Transient Voltage Suppression (TVS)

protection of one line

I Max. peak pulse power: PPP = 890 W

I Low clamping voltage: VCL = 19 V

I Low leakage current: IRM = 300 nA

I ESD protection up to 30 kV

I IEC 61000-4-2; level 4 (ESD)

I IEC 61000-4-5 (surge); IPP = 47 A

I AEC-Q101 qualiï¬ed

1.3 Applications

I Computers and peripherals

I Audio and video equipment

I Cellular handsets and accessories

I Communication systems

I Portable electronics

I Medical and industrial equipment

1.4 Quick reference data

Table 2. Quick reference data

Tamb = 25 Â°C unless otherwise speciï¬ed.

Symbol Parameter

Conditions

VRWM

reverse standoff voltage

PESD5V0S1UJ

PESD12VS1UJ

diode capacitance

PESD5V0S1UJ

f = 1 MHz; VR = 0 V

PESD12VS1UJ

Min Typ Max Unit

480 530 pF

160 180 pF

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