PESD5V0S1BLD Datasheet, PDF (1/13 Pages) NXP Semiconductors – Low capacitance bidirectional ESD protection diode

PESD5V0S1BLD
Low capacitance bidirectional ESD protection diode
Rev. 1 — 12 October 2010
Product data sheet
1. Product profile
1.1 General description
Low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed
to protect one signal line from the damage caused by ESD and other transients.
The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD)
plastic package with visible and solderable side pads.
1.2 Features and benefits
„ Bidirectional ESD protection of one line „ ESD protection up to 30 kV
„ Ultra small SMD plastic package
„ IEC 61000-4-2; level 4 (ESD)
„ Solderable side pads
„ Package height typ. 0.37 mm
„ Low clamping voltage: V_CL = 14 V
„ AEC-Q101 qualified
„ IEC 61000-4-5 (surge); I_PP = 12 A
„ Max. peak pulse power: P_PP = 130 W
„ Ultra low leakage current: I_RM = 5 nA
1.3 Applications
„ Computers and peripherals
„ Audio and video equipment
„ Cellular handsets and accessories
„ Communication systems
„ Portable electronics
1.4 Quick reference data
Table 1. Quick reference data
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
V_RWM
C_d
reverse standoff voltage
diode capacitance
f = 1 MHz; V_R = 0 V
Min Typ Max Unit
-
-
5.0 V
-
35
45
pF