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PESD5V0L5UK Datasheet, PDF (1/15 Pages) NXP Semiconductors – Low capacitance unidirectional fivefold ESD protection diode arrays | |||
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PESD3V3L5UK; PESD5V0L5UK
Low capacitance unidirectional fivefold ESD protection diode
arrays
Rev. 1 â 25 August 2010
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode
arrays in a leadless ultra small SOT891 Surface-Mounted Device (SMD) plastic package
designed to protect up to five unidirectional signal lines from the damage caused by ESD
and other transients.
1.2 Features and benefits
 ESD protection of up to five lines
 Low diode capacitance
 Max. peak pulse power: PPP = 30 W
 Low clamping voltage: VCL = 9.5 V
 AEC-Q101 qualified
 Very low leakage current: IRM = 0.5 μA
 ESD protection up to 20 kV
 IEC 61000-4-2; level 4 (ESD)
 IEC 61000-4-5 (surge); IPP = 3.2 A
1.3 Applications
 Computers and peripherals
 Audio and video equipment
 Cellular handsets and accessories
 Communication systems
 Portable electronics
 Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
PESD3V3L5UK
PESD5V0L5UK
Cd
diode capacitance
PESD3V3L5UK
f = 1 MHz; VR = 0 V
PESD5V0L5UK
Min Typ Max Unit
-
-
3.3 V
-
-
5.0 V
-
20
24
pF
-
18.5 22
pF
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