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PESD5V0L5UK Datasheet, PDF (1/15 Pages) NXP Semiconductors – Low capacitance unidirectional fivefold ESD protection diode arrays
PESD3V3L5UK; PESD5V0L5UK
Low capacitance unidirectional fivefold ESD protection diode
arrays
Rev. 1 — 25 August 2010
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode
arrays in a leadless ultra small SOT891 Surface-Mounted Device (SMD) plastic package
designed to protect up to five unidirectional signal lines from the damage caused by ESD
and other transients.
1.2 Features and benefits
„ ESD protection of up to five lines
„ Low diode capacitance
„ Max. peak pulse power: PPP = 30 W
„ Low clamping voltage: VCL = 9.5 V
„ AEC-Q101 qualified
„ Very low leakage current: IRM = 0.5 μA
„ ESD protection up to 20 kV
„ IEC 61000-4-2; level 4 (ESD)
„ IEC 61000-4-5 (surge); IPP = 3.2 A
1.3 Applications
„ Computers and peripherals
„ Audio and video equipment
„ Cellular handsets and accessories
„ Communication systems
„ Portable electronics
„ Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
PESD3V3L5UK
PESD5V0L5UK
Cd
diode capacitance
PESD3V3L5UK
f = 1 MHz; VR = 0 V
PESD5V0L5UK
Min Typ Max Unit
-
-
3.3 V
-
-
5.0 V
-
20
24
pF
-
18.5 22
pF