PESD5V0L2UMB Datasheet, PDF (1/13 Pages) NXP Semiconductors – Low capacitance unidirectional double ESD protection array

PESD5V0L2UMB
Low capacitance unidirectional double ESD protection array
Rev. 1 — 21 February 2012
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional double ElectroStatic Discharge (ESD) protection array
designed to protect up to two signal lines from the damage caused by ESD and other
transients. The device is housed in a leadless ultra small SOT883B Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
 ESD protection of up to two lines
 Low diode capacitance C_d = 16 pF
 Low clamping voltage V_CL = 10 V
 Ultra low leakage current I_RM = 5 nA
1.3 Applications
 Computers and peripherals
 Audio and video equipment
 Cellular handsets and accessories
 ESD protection up to 15 kV
 IEC 61000-4-2; level 4 (ESD)
 IEC 61000-4-5 (surge); I_PPM = 2.5 A
 AEC-Q101 qualified
 Portable electronics
 SIM card protection
 Communication systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per diode
V_RWM
C_d
reverse standoff voltage
diode capacitance
Conditions
f = 1 MHz; V_R = 0 V
Min Typ Max Unit
-
-
5
V
-
16
19
pF