PESD5V0H1BSF_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Ultra low capacitance bidirectional ESD protection diode

PESD5V0H1BSF
Ultra low capacitance bidirectional ESD protection diode
7 May 2015
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode,
part of the TrEOS Protection family. This device is housed in a DSN0603-2 (SOD962)
leadless ultra small Surface-Mounted Device (SMD) package. The TrEOS Protection
family is optimized for safeguarding very sensitive high-speed interfaces against ESD
pulses with a high level of robustness.
2. Features and benefits
• Bidirectional ESD protection of one line
• Extremely low diode capacitance:
– C_d = 0.15 pF at 1 MHz
– C_d = 0.13 pF at 2.5 GHz
• ESD protection up to ±15 kV according to IEC 61000-4-2
• Ultra small SMD package
3. Applications
ESD and surge protection for:
• ultra high-speed datalines
• very sensitive interface lines
• generic interface lines
in portable electronics, communication, consumer and computing devices.
4. Quick reference data
Table 1.
Symbol
C_d
Quick reference data
Parameter
diode capacitance
V_RWM
reverse standoff
voltage
Conditions
f = 1 MHz; V_R = 0 V; T_amb = 25 °C
f = 2.5 GHz; V_R = 0 V; T_amb = 25 °C
T_amb = 25 °C
Min Typ Max Unit
-
0.15 0.19 pF
-
0.13 -
pF
-
-
5
V
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