PESD5V0F5UV_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Femtofarad unidirectional fivefold ESD protection array

PESD5V0F5UV
Femtofarad unidirectional fivefold ESD protection array
Rev. 1 — 17 July 2012
Product data sheet
1. Product profile
1.1 General description
Femtofarad capacitance unidirectional ElectroStatic Discharge (ESD) protection diode
array designed to protect up to five signal lines from the damage caused by ESD and
other transients. The device is encapsulated in an ultra small and flat lead SOT666
Surface-Mounted Device (SMD) plastic package.
The combination of extremely low capacitance, high ESD maximum rating and ultra small
package makes the device ideal for high-speed data line protection and antenna
protection applications.
1.2 Features and benefits
 ESD protection of up to 5 lines
 Low diode capacitance C_d = 0.55 pF
 Ultra low leakage current I_RM < 1 nA
 ESD protection up to 8 kV
 IEC 61000-4-2; level 4 (ESD)
 IEC 61000-4-5 (surge); I_PPM = 2 A
 AEC-Q101 qualified
1.3 Applications
 Computers and peripherals
 Audio and video equipment
 Cellular handsets and accessories
 10/100/1000 Mbit/s Ethernet
 Communication systems
 Portable electronics
 SIM card protection
 High-speed data lines
1.4 Quick reference data
Table 1. Quick reference data
T_amb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
V_RWM
reverse standoff voltage
C_d
diode capacitance
f = 1 MHz; V_R = 0 V
Min Typ Max Unit
-
-
5
V
-
0.55 0.7 pF