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PESD5V0F1USF_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Extremely low capacitance unidirectional ESD protection diode
PESD5V0F1USF
Extremely low capacitance unidirectional ESD protection
diode
Rev. 1 — 11 December 2012
Product data sheet
1. Product profile
1.1 General description
Extremely low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode
in a DSN0603-2 (SOD962) leadless ultra small Surface-Mounted Device (SMD) package
designed to protect one signal line from the damage caused by ESD and other transients.
1.2 Features and benefits
 Unidirectional ESD protection of one line
 Extremely low diode capacitance Cd = 0.6 pF
 ESD protection up to 10 kV according to IEC 61000-4-2
 Ultra low leakage current IRM = 1 nA
 Ultra small SMD package
1.3 Applications
 Cellular handsets and accessories
 Portable electronics
 Communication systems
 Computers and peripherals
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
Cd
reverse standoff voltage
diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
-
-
5
V
-
0.6 0.75 pF