PESD5V0F1BL_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Femtofarad bidirectional ESD protection diode

PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
Rev. 3 — 24 October 2011
Product data sheet
1. Product profile
1.1 General description
Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless
ultra small SOD882 Surface-Mounted Device (SMD) plastic package designed to protect
one signal line from the damage caused by ESD and other transients. The combination of
extremely low capacitance, high ESD maximum rating and ultra small package makes the
device ideal for high-speed data line protection and antenna protection applications.
1.2 Features and benefits
 Bidirectional ESD protection of one line  ESD protection up to 10 kV
 Femtofarad capacitance: C_d = 400 fF
 Low ESD clamping voltage: 30 V
 IEC 61000-4-2; level 4 (ESD)
 AEC-Q101 qualified
at 30 ns and  8 kV
 Very low leakage current: I_RM < 1 nA
1.3 Applications
 10/100/1000 Mbit/s Ethernet
 FireWire
 High-speed data lines
 Subscriber Identity Module (SIM) card
protection
 Cellular handsets and accessories
 Portable electronics
 Communication systems
 Computers and peripherals
 Audio and video equipment
 Antenna protection
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per device
V_RWM
C_d
reverse standoff voltage
diode capacitance
Conditions
f = 1 MHz; V_R = 0 V
Min Typ
-
-
-
0.4
Max Unit
5.5 V
0.55 pF