PESD5V0F1BLD_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Femtofarad bidirectional ESD protection diode

PESD5V0F1BLD
Femtofarad bidirectional ESD protection diode
Rev. 1 — 23 July 2012
Product data sheet
1. Product profile
1.1 General description
Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode designed to
protect one signal line from the damage caused by ESD and other transients. The device
is encapsulated in a leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted
Device (SMD) plastic package with visible and solderable side pads.
The combination of extremely low capacitance, high ESD maximum rating and ultra small
package makes the device ideal for high-speed data line protection and antenna
protection applications.
1.2 Features and benefits
 Bidirectional ESD protection of one line  ESD protection up to 10 kV
 Femtofarad capacitance: C_d = 400 fF
 Low ESD clamping voltage: 30 V
 IEC 61000-4-2; level 4 (ESD)
 Package height typ. 0.37 mm
at 30 ns and 8 kV
 Very low leakage current: I_RM < 1 nA  AEC-Q101 qualified
1.3 Applications
 10/100/1000 Mbit/s Ethernet
 FireWire
 High-speed data lines
 SIM card protection
 Cellular handsets and accessories
 Portable electronics
 Communication systems
 Computers and peripherals
 Audio and video equipment
 Antenna protection
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per device
V_RWM
C_d
reverse standoff voltage
diode capacitance
Conditions
f = 1 MHz; V_R = 0 V
Min Typ
-
-
-
0.4
Max Unit
5.5 V
0.55 pF