PESD5V0C1BSF_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Ultra low capacitance bidirectional ESD protection diode

PESD5V0C1BSF
Ultra low capacitance bidirectional ESD protection diode
6 May 2015
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode,
part of the TrEOS Protection family. This device is housed in a DSN0603-2 (SOD962)
leadless ultra small Surface-Mounted Device (SMD) package. The TrEOS Protection
family is optimized for safeguarding very sensitive high-speed interfaces against ESD
pulses with a high level of robustness.
2. Features and benefits
• Bidirectional ESD protection of one line
• Extremely low diode capacitance C_d = 0.2 pF
• ESD protection up to ±20 kV according to IEC 61000-4-2
• Ultra small SMD package
3. Applications
ESD and surge protection for:
• ultra high-speed datalines
• very sensitive interface lines
• generic interface lines
in portable electronics, communication, consumer and computing devices.
4. Quick reference data
Table 1.
Symbol
C_d
V_RWM
Quick reference data
Parameter
diode capacitance
reverse standoff
voltage
Conditions
f = 1 MHz; V_R = 0 V; T_amb = 25 °C
T_amb = 25 °C
Min Typ Max Unit
-
0.2 0.25 pF
-
-
5
V
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