PESD3V3V4UW Datasheet, PDF (1/11 Pages) NXP Semiconductors – Very low capacitance quadruple ESD protection diode arrays in SOT665 package

PESDxV4UW series
Very low capacitance quadruple ESD protection diode arrays
in SOT665 package
Rev. 01 — 22 April 2005
Product data sheet
1. Product profile
1.1 General description
Very low capacitance quadruple ElectroStatic Discharge (ESD) protection diode arrays in
ultra small SOT665 plastic package designed to protect up to four signal lines from the
damage caused by ESD and other transients.
1.2 Features
s ESD protection of up to four lines
s Very low diode capacitance
s Low clamping voltage
s Ultra low leakage current: I_RM = 3 nA
s ESD protection up to 12 kV
s IEC 61000-4-2; level 4 (ESD)
1.3 Applications
s Computers and peripherals
s Audio and video equipment
s Cellular handsets and accessories
s Communication systems
s Portable electronics
s Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1:
Symbol
V_RWM
C_d
Quick reference data
Parameter
reverse stand-off voltage
PESD3V3V4UW
PESD5V0V4UW
diode capacitance
PESD3V3V4UW
PESD5V0V4UW
Conditions
f = 1 MHz;
see Figure 5;
V_R = 0 V
Min Typ Max Unit
-
-
3.3 V
-
-
5.0 V
-
15
18
pF
-
12
15
pF