PESD3V3U1UA Datasheet, PDF(1/12 Page) NXP Semiconductors – Ultra low capacitance unidirectional ESD protection diodes

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PESD3V3U1UA Datasheet, PDF (1/12 Pages) NXP Semiconductors – Ultra low capacitance unidirectional ESD protection diodes

PESD3V3U1UA;

PESD3V3U1UB; PESD3V3U1UL

Ultra low capacitance unidirectional ESD protection diodes

Rev. 01 â 30 October 2008

Product data sheet

1. Product proï¬le

1.1 General description

Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in

small Surface-Mounted Device (SMD) plastic packages designed to protect one signal

line from the damage caused by ESD and other transients.

Table 1. Product overview

Type number

Package

NXP

PESD3V3U1UA

SOD323

PESD3V3U1UB

SOD523

PESD3V3U1UL

SOD882

JEITA

SC-76

SC-79

Package conï¬guration

very small

ultra small and ï¬at lead

leadless ultra small

1.2 Features

I Unidirectional ESD protection of one line I ESD protection up to 9 kV

I Ultra low diode capacitance: Cd = 2.6 pF I IEC 61000-4-2; level 4 (ESD)

I Very low leakage current: IRM = 1 nA I AEC-Q101 qualiï¬ed

1.3 Applications

I USB interfaces

I 10/100/1000 Mbit/s Ethernet

I FireWire

I High-speed data lines

I Subscriber Identity Module (SIM) card

protection

I Cellular handsets and accessories

I Portable electronics

I Communication systems

I Computers and peripherals

I Audio and video equipment

1.4 Quick reference data

Table 2. Quick reference data

Tamb = 25 Â°C unless otherwise speciï¬ed.

Symbol Parameter

Conditions

VRWM

reverse standoff voltage

diode capacitance

f = 1 MHz; VR = 0 V

Min Typ Max Unit

3.3 V

2.6 3.1 pF

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