PESD3V3S4UF Datasheet, PDF(1/13 Page) NXP Semiconductors – Unidirectional quadruple ESD protection diode arrays

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PESD3V3S4UF Datasheet, PDF (1/13 Pages) NXP Semiconductors – Unidirectional quadruple ESD protection diode arrays

PESD3V3S4UF; PESD5V0S4UF

Unidirectional quadruple ESD protection diode arrays

Rev. 01 â 17 January 2008

Product data sheet

1. Product proï¬le

1.1 General description

Unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in a small

SOT886 Surface-Mounted Device (SMD) plastic package designed to protect up to four

signal lines from the damage caused by ESD and other transients.

1.2 Features

I ESD protection of up to four lines

I Max. peak pulse power: PPP = 110 W

I Low clamping voltage: VCL = 11 V

I Ultra low leakage current: IRM = 4 nA

I ESD protection up to 30 kV

I IEC 61000-4-2; level 4 (ESD)

I IEC 61000-4-5 (surge); IPP = 10 A

I AEC-Q101 qualiï¬ed

1.3 Applications

I Computers and peripherals

I Audio and video equipment

I Cellular handsets and accessories

I Communication systems

I Portable electronics

1.4 Quick reference data

Table 1. Quick reference data

Tamb = 25 Â°C unless otherwise speciï¬ed.

Symbol Parameter

Conditions

Per diode

VRWM

reverse standoff voltage

PESD3V3S4UF

PESD5V0S4UF

diode capacitance

PESD3V3S4UF

f = 1 MHz; VR = 0 V

PESD5V0S4UF

Min Typ Max Unit

3.3 V

5.0 V

110 300 pF

220 pF

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